The present work investigates the temperature of substrate through thermocouple during depositing TiN thin films by AIP, when d. c biases and pulsed biases are used in AIP-1 and Bulat6 deposition systems, respectively.

• 本文以沉积TiN薄膜为例，用热电偶直接接触法分别在AIP-1型和Bulat6型电弧离子沉积系统中测试直流偏压和脉冲偏压下基体的温度。