The negative-bias temperature instability (NBTI) characteristics of HfN/HfO_2 gated p-MOSFET with equivalent oxide thickness (EOT) of 1.3nm and low pre-existing traps are studied.

• 研究了HfN/HfO_2高K栅结构p型金属-氧化物-半导体(MOS)晶体管(MOSFET)中；负偏置-温度应力引起的阈值电压不稳定性(NBTI)特征.；HfN/HfO_2高K栅结构的等效氧化层厚度(EOT)为1·3nm；内含原生缺陷密度较低