The microstructure and optical properties of epitaxial laterally overgrown (ELO) GaN films on Si (III) substrate by hydrade vapor phase epitaxy (HVPE) have been investigated.

• 用氢化物气相外延 (HVPE)方法在Si(III)衬底上成功横向外延生长出晶体质量较好的GaN薄膜材料。