The measured result shows that the forward bias current-voltage behavior of the device deviates from Shockley model of p-n junction. It is found that the dominant mechanism of carrier transport across the junction is dependent on carrier tunneling.

• 实验表明，器件正向偏压下的I－V特性偏离了pn结二极管的肖克莱模型的结果，并且载流子的主要输运机制与载流子隧穿有关。