The measured result shows that the forward bias current-voltage behavior of the device deviates from Shockley model of p-n junction. It is found that the dominant mechanism of carrier transport across the junction is dependent on carrier tunneling.
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释义
实验表明,器件正向偏压下的I-V特性偏离了pn结二极管的肖克莱模型的结果,并且载流子的主要输运机制与载流子隧穿有关。
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