The maximum x-directional strain of NMOS channel is 0.6% when the model is gave 1GP of the intrinsic stress of the silicon nitride capping layer under a temperature loading of -400K.

• 对于奈米结构而言，本研究所建立之模拟方式可详尽探讨弯矩对应变矽之力学行为，并可依此对NMOS元件进行分析与设计。