The interface diffusion phenomena of BTO/Si were systematically studied by Auger electron spectroscopy(AES) and X-ray photoelectron spectroscopy(XPS).

• 通过俄歇电子能谱(AES),X光电子能谱(XPS)等分析手段系统研究了在Si基片上直接生长BTO铁电薄膜过程中的界面扩散现象。