The indium assistant growth was adopted for the first time to grow GaN film by HVPE, and the crystalline quality and surface morphology of the epi-layer were improved by using this method.
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释义
首次在HVPE中采用In辅助外延生长GaN薄膜,使外延层表面变得更加光滑平整,结晶质量也有所提高;
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