The implanted silicon occupying Ga Sublattice sites behaves as the shallow donor Si_(Ga) and that being held on As sublattice sites by boron behaves as the shallow acceptor complex B_(Ga) Si_(as) or Si_(As).

• 认为BF~+的影响主要反应在B的影响,由于B的掺入使B替Ga位从而促使大量Si去替As位,形成B_(Ga)-Si_(As)和Si_(As)受主,从而减少了Si_(Ga)的施主浓度并且补偿了n型载流子浓度。