The growth method employed in this study is chemical vapor deposition from a mixture of ferrocene and xylene,by which a strong selective growth from SiO_2 to Si was observed.

• 利用以二茂铁和二甲苯作为反应前驱体的化学气相沉积法在该基底上实现了碳管在二氧化硅与硅之间的选择性生长,并在不同的沉积温度条件下,可以分别获得球状和束状碳管产物。