The grain boundary(GB) character and recombination activity of grain boundaries(GBs) in multicrystalline silicon(mc-Si) were studied by means of electron back-scattered diffraction(EBSD) and electron-beam-induced current(EBIC) techniques.

• 利用电子背散射衍射(electron back-scattered diffraction,EBSD)和电子束诱生电流(electron beam induced cur-rent,EBIC)技术对铸造多晶硅的晶界类型和晶界复合特性进行了研究。