The following text is about the newly-developed crystall membrane iodine ion sensitive semiconductor device in which Si3N4 /SiO2 is used as the insulator film and AgI-Ag2S as sensitive film and includes an analysis of its mechanism of the sensitivity.

• 本文报导以Si_3N_4/SiO_4为绝缘膜；用AgI-Ag_2S晶体为敏感膜的碘离子敏感半导体器件；并对其敏感机理进行了分析.