The fitting results show that the surface resistivity of c-BN thin film doped and annealed is lower 3 to 4 orders and the activation energy in different tempture area are 0.54eV and 0.32eV.

• 实验结果表明:离子注入掺杂后的c-BN薄膜表面电阻率随着退火温度的升高和Be离子注入剂量的增大逐渐降低；薄膜表面电阻率比掺杂前下降了3-4个数量级。 经计算得到掺杂后c-BN薄膜不同温度范围内激活能分别为0.；54eV和0