The fabrication and reliability of ohmic contact on n type GaAs and fai lure analysis of GaAs MESFET based on ohmic contact degradation are reported in this paper.
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释义
报道了n型GaAs上欧姆接触的制备及其可靠性,以及基于欧姆接触退化的GaAsMES-FET的失效分析。
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