The experimental results demonstrate that DDCVSL and SABL all have a high DPA-resistance with the shrinking channel-length of the transistors.

• 实验结果表明,随着晶体管沟道长度的减小,内部节点电容对功耗恒定特性的作用逐渐减小,DDCVSL与SABL具有相近的防DPA攻击特性。