The experimental measurements together with the theoretical results indicate that the Bir_Aronov_Pikus (BAP) mechanism plays a dominant role for spin polarization decay, especially in band bending region of GaAs(100).

• 结果表明；由费米钉扎而引起的能带弯曲明显影响电子的自旋弛豫过程；从实验上观察到了GaAs(100)表面能带弯曲区域的电子自旋翻转时间存在近2个量级的差异(从几纳秒到几十皮秒)；基于电子_自旋交换相互作用的BAP机理在自旋弛豫过程中起着主导作用.