The emission wavelength of strained-Ge MOS LED is redshifted due to the band gap reduction, and biaxial strain can give more band gap reduction than uniaxial strain.

• 由于应变使得锗的能隙变小，进而使得发光频谱有红位移的现象发生，而双轴应变所造成的能隙减少较单轴应变多。