The device used in the experiments only differs from common TFTs in the gate configuration.In order to allow gas reactions with the SnO2-surface, the gate is buried under the semiconducting layer.
英
美
释义
并使用此数学模型,找出元件定电流加压测试之后在通道到汲极、源极之间,较容易产生损坏的地方,也就是缺陷陷阱产生之位置。
把海词放在桌面上,查词最方便
触屏版
|
电脑版
©2003 - 2024 海词词典(Dict.cn)
立即下载