The characteristics of the LDMOS with a linearly graded drift region doped profile have been demonstrated by the 2D semiconductor simulator MEDICI and verified by our experimental results.

• 用二维器件软件MEDICI对具有线性变化掺杂漂移区的RESURFLDMOS晶体管的性能进行了数值分析并由实验对其结果进行了验证 .