The bond layer has no holes, and the edge bond rate amounts to above 98%, and the bond strength is above 220 kg/cm 2. By doping the same kind dopant with low resistance, realizes the stress compensation.

• 实现了键合层无孔洞， 边沿键合率达98%25 以上， 键合强度达2156 Pa 以上， 并通过在锗中掺入与低阻同型号的杂质， 实现了应力补偿。