The blue-shift of the absorption edge of the compound films were observed comparing to that of bulk GaAs crystal. The blue-shift value of 1.16eV was obtained in the films with diameter of (3.2nm) GaAs nano-particles.
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与大块GaAs材料相比;复合薄膜的光学吸收边发生了明显的蓝移;GaAs颗粒尺寸3 2nm的复合薄膜吸收边蓝移达1 16eV.
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