The analytical model which comprises the temperature compensation for the SiC MOSFET is modified by considering the Gauss model of interface state density and the Poole-Frenkel effect.

• 考虑界面态电荷高斯分布模型以及Poole-Frenkel效应；对SiC MOSFET补偿电流源模型进行了修正；分析了造成6H-SiC NMOS与PMOS器件补偿电流源变化的原因.