The a-Si:H thin films were deposited by PECVD and then were annealed in RTA furnace.The microstructure of thin films was investigated by XRD and Raman specra.

• 摘要采用等离子体增强化学气相沉积法(PECVD)沉积非晶硅薄膜，然后在快速热退火炉中进行退火。