The SiGe compounds with different Ge contents bulk material was used to fabricate MSM photodetectors.I-V results shown that sample with higher Ge content has lower photo-to-dark current ratio.

• 而以锗含量不同的材料制作金半金光检测器来做比较亦可以发现锗含量愈高的试片，其光暗电流比愈小，这是由于锗含量愈高的试片其内部缺陷愈多，造成暗电流愈大所致。