The ELO (Epitaxial Lateral Overgrowth) process based on the growth of Si film over aSiO_2 mask using system of SiCl_4/H_2/Br_2 has been in vestigated.

• 本文研究了在常压外延系统中；利用 SiCl_4/H_2/Br_2体系在SiO_2上外延横向生长(ELO)单晶硅技术.