The 7.4% speed enhancement is achieved for the 250 nm node ring oscillator under uniaxial tensile strain for mutually perpendicular layout of the NFET and the PFET.

• 对于250奈米制程，经实验量测，以平行于n型金氧半场效电晶体之单轴张力，对n型与p型金氧半场效电晶体通道互相垂直之环型振荡器可有7.；4%25的速度增加。