The 180keV Si~+ implanted and annealed GaAs(100) wafers are investigated by X-ray dou-ble crystal diffraction(DCD),accompanied by measuring the electrical properties and simula-ting the double-crystal rocking curves (RCs).

• 本文用X射线双晶衍射术；结合摇摆曲线的计算机模拟和电学测量；研究了 180keV Si+注入GaAs(100)样品及其退火过程中的结构变化.