TCB, resulted in a more ordered structure of RR-P3HT films.The observations provided a reasonable explanation for better device performance of RR-P3HT OTFTs when using TCB as a solvent.

• 我们建议真空静置可以提升电晶体元件的效能，如场效载子迁移、开关比、临界电压及次临界斜率等方面的改善。