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Research on ESD Breakdown Model in IC Silicon Dioxide Films 芯片氧化层静电放电击穿模型研究
FT-IR study of silicon dioxide films fabricated by rapid thermal oxidation 快速热氧化制备二氧化硅薄膜的红外研究
Study of Size Effect of the Thermal Conduction for Silicon Dioxide Film 石英薄膜热传导尺寸效应研究
Research on Physical Model of ESD Dielectric Breakdown in IC Silicon Dioxide Films 电子器件氧化层ESD介质击穿物理模型研究
Experimental study of the thermal conduction size effect for silicon dioxide film 二氧化硅薄膜材料热传导尺寸效应的实验研究
Silicon dioxide films 二氧化硅膜
silicon dioxide film 二氧化硅膜
There is a protective coating of silicon dioxide on the silicon carbide. 在棒的表面有一层二氧化硅保护涂层。
The method is to coat a wafer of silicon with a protective layer of silicon dioxide. 其方法是往硅片上涂上一层二氧化硅防护膜。
The lithographic and etching process for a membrane creates a mesh of metal wires with silicon dioxide filling the space between them. 薄膜先以微影及蚀刻制程制作出金属线路，线路之间则填入二氧化矽。
The principle and the main parameters of the dry etching for silicon dioxide are introduced. 摘要阐述了二氧化矽干法蚀刻的原理和主要的蚀刻参数。
The hydrated silicon dioxide with three layers structure of micron-submicron-millimicron was observed through TEM. 通过电镜实验,观察到水合二氧化硅具有微米亚微米纳米三次结构。
Other Ingredients: gelatin (capsule), dibasic calcium phosphate, and colloidal silicon dioxide. 其它成份: 明胶(胶囊), 二元钙磷酸盐, 和胶质二氧化硅。
Organosilicon deformer is obtained from dimethyl-silicon oil and silicon dioxide through teat of orthogonal design. 摘要采用正交设计实验法以二甲基硅油及二氧化硅为主要原料制备了有机硅消泡剂。
Silica sol is a kind of colloid solution well dispersing corpuscles of silicon dioxide in water. 硅溶胶是二氧化硅的微粒分散于水中的胶体溶液。
Silicon Dioxide is obtained by insolubilizing the dissolved silica in sodium silicate solution. 二氧化硅是通过将在硅酸钠溶液中已溶解的硅固化而得。
W - doped vanadium dioxide film was prepared by dipping V - W commixed sol on surface of glass slide and reducing in hydrogen atmosphere. 采用钒-钨混合溶胶及浸渍提拉法在玻璃基片上涂五氧化二钒膜,再通过氢还原法制备掺钨二氧化钒薄膜。
The solution is to use something other than the usual silicon dioxide to insulate the gate. 解决之道是用二氧化矽以外的材料来做为闸极的绝缘体。
Hydrated silicon dioxide with such three layers structure has good transparence and is easily crashed and dispersed. 具有此三次结构的水合二氧化硅透明性好,易被破碎、分散。
Results show that the phase transition temperature ( Tc) of W - doped Vanadium dioxide film prepared by an inorganic sol - gel process can be reduced to room temperature. 实验证明采用无机溶胶凝胶法制备掺钨二氧化钒薄膜可将二氧化钒薄膜的相变温度点降低到室温范围。