Secondly, properties of the diffusion barrier (TaNx) on the Cu/ TaNx/ CoSi2/p+n junctions will be studied by changing the thickness of the diffusion barrier layer and the passivation layer to find the optimum fabrication condition.

• 其次，本计画第二年将研究铜金属化与矽化钴接触接面之整合，如阻障层厚度之调整以控制阻障特性与阶梯覆盖性之最佳化等研究。