Results are summaried as followed: (1) InxGa1-xN/GaN multiple quantum well samples with strained-layer thickness larger/less than the critical thickness were investigated.

• 主要结果如下： （1）系统地研究了光学性能差异较大的InGaN/GaN多量子阱材料，发现：在性能较差的样品中，从InGaN应力层中产生了高密度的失配位错，这些失配位错是由于应力层厚度超过临界厚度产生应力弛豫引起的。