Recently, a new charge-trapping Flash memory device named bandgap engineered SONOS (BE-SONOS) is proposed to overcome the fundamental limitation of SONOS.

• 最近这几年一种新的电荷捕捉快闪记忆体元件被提出具有克服传统SONOS元件应用上限制的能力。该种记忆体元件称作能带隙工程矽-氧-氮-氧-矽（BE-SONOS）元件。