Photoluminescence spectra and photoluminescence excitation spectra for the light emission of around 2.25 eV from undoped and C doped GaN films grown by HVPE are measured.

• 测量了氢化物气相外延方法生长的非特意掺杂和掺碳GaN外延膜的光致发光谱 ；并在光致发光谱峰位2 .；2 5eV(5 5 0nm)附近分别测量了光致发光激发谱；对两者进行了比较