PECVD deposited SiO2 can lead to a critical hydration effect such that the gate voltage drift of a PECVD SiO2-gate ISFET is obvious relative to other ISFETs with sensing layers of different materials.

• 电浆辅助化学气象沈积的二氧化矽材料会导致严重的水合作用，因此以此材料当作感测层的离子感测电晶体相对于其他材料的离子感测电晶体而言，会产生明显的闸极电压飘移现象。