Oxygen and carbon behavior and minority-carrier lifetimes in multicrystalline silicon(mc-Si) were investigated by means of FTIR and QSSPCD after three step annealing.

• 对多晶硅片进行三步退火处理,用傅里叶红外光谱仪(FTIR)和准稳态光电导衰减法(QSSPCD)测硅片退火前后氧碳含量及少子寿命,并对单晶硅片做同样处理进行比较。