Optimum designing the device structure, strictlv controlling the parameters of LPE growthand perfect fabricating processing of devices, the In GaAs/InP SAGM APDs with low dark currentand high multiplication factor have been obtainecl.

• 根据器件结构的优化设计,严格控制生长参数以及理想的器件制备工艺获得了低漏电高增益InGaAs/InP SAGM雪崩光电二极管。