Moreover a P collective region is also produced at the interface of contact and p-InP where Au and InP compound Au2P3. The binding energy of P 2p3/2 of Au2P3 is about 129.2 eV.

• 在接触与p-InP的界面产生一个P聚集区；同时Au与InP反应生成Au2p3；其P的2p3/2电子的结合能约为129.；2 eV。