Microdefects in SI-GaAs single crystal were researched via transmission electron microscope (TEM) and energy dispersion X-ray analysis (EDXA).

• 利用JEM 2 0 0 2透射电子显微镜 (TEM)及其主要附件X射线能量散射谱仪 (EDXA) ,对半绝缘砷化镓 (SI GaAs)单晶中微缺陷进行了研究。