Low-level human body model(HBM)ESD stresses were imposed on microwave low noise amplifier NPN silicon epitaxial transistor 2SC3356; it was shown that the DC current gain hFE degraded gradually with the increment of the times of ESD stresses.

• 从CB管脚对微波低噪声NPN晶体管2SC3356施加低电压人体模型(HBM)的ESD应力；发现；随着ESD应力次数的增加；器件的放大特性hFE逐渐退化；并且当电压达到一定水平；多次的ESD可以使器件失效.