Keywords UHVCVD;Selective growth;single crystal SiGe;Poly-SiGe;metal induced;Schottky Barrier Diode;rectification ratio;

• 超高真空化学气相沉积;选择性生长;单晶锗硅薄膜;多晶锗硅薄膜;金属诱导;肖特基二极管;整流比;