It is worthwhile to notice that the minimum noise figure increases dramatically after hard oxide breakdown (HBD).It can be explained by the additional shot noise source in gate oxide after HBD.

• 值得注意的是金氧半场效电晶体在氧化层崩溃后会在氧化层区产生额外的散粒杂讯,因此其最小杂讯值会剧烈地增加。