It has no kink effect on output performance,an off-state breakdown of up to 13V,and fT=6GHz at DC bias of Vg=Vd=3.6V.At 1.5GHz,a power-added efficiency(PAE)of 50% is achieved with an output power of up to 27dBm from this device.

• 在栅漏偏压为3.；6V时；截至频率为6GHz