In this thesis, etched walls with verticality of better than 89? and Root-mean-Square (RMS) surface roughness of below 10 nm are achieved by using non-switched Inductivity Coupled Plasma (ICP) etching technique.

• 论文采用无切换的电感耦合等离子体刻蚀(ICP)技术在SOI材料上刻蚀出垂直度好于89°、均方根表面粗糙度小于10nm的刻蚀侧壁。