In this paper, we present a full explanation for the average-bond-energy (ABE) model, which was developed, on the basis of numerical calculations, for the determination of valence-band offsets at heterointerfaces.

• 平均键能模型是一种建立在数值基础上的用来确定半导体异质界面能带偏移的模型方法。 本文首先对这一模型方法的物理基础进行了理论分析,并给予其完整的物理解释。