In the second part, we have performed the PL and the Raman scattering measurements on the Ge QDs with different fold numbers and different Si spacer thickness.

• 在第二部分所要呈现的则是不同堆叠层数与不同矽间隔的厚度这两批矽/锗量子点的光激发萤光光谱与拉曼散射光谱的分析研究。