In the process of doping Zn into InP induced by the pulsed laser,the temperature of the semiconductor and metal interface is one of the most important factors which affect the depth and impurity concentration of laser inducing doping.

• 脉冲激光诱导InP的Zn掺杂过程中；金属-半导体分界面附近的温度是影响掺杂浓度和掺杂深度的一个重要因素.