In the procedure used in the paper a reliable depth profile of nitrogen in TiN_x/ TiSi_x bilayer structure can be obtained, The results on interaction of Ti/Si and Ti/SiO_2/Si during RTA in N_2 and Ar ambient have also been presented.

• 本文采用窄能量窗口选择和谱图叠减处理法精确的分析了TiN_X/TiSi_X双层结构中N的深度分布,同时给出了有关Ti/Si,Ti/SoO_2/Si在快速热退火后界面反应和产物的结果。