In the measurement with duration of 6 hours, the hydration depth of a PECVD SiO2 layer was about 500?? and the maximum gate voltage drift of a PECVD SiO2-gate ISFET was 81mV.

• 六小时的量测结果显示，电浆辅助化学气象沈积的二氧化矽材料层的水合深度大约是500埃，并且最大的闸极电压飘移是81毫伏。