In the deep submicrometer design, with the increase of metal layer and the reduced width of line, the circuit performance and density have been improved greatly.

• 摘要集成电路设计进入了超深亚微米领域，金属层增加，线宽减小，使电路的性能和密度都得到了很大的提高，但也引入了愈来愈严重的互连线效应，并最终引发了信号完整性问题。