In n-MOSFET, we found the worst case stress condition occurred under Vg=peak Isub at operating voltage, and interface traps are primary damage in n-MOSFET.

• 热载子效应的实验结果发现元件的最快加速退化情况为闸极偏压在最大基极电流时，而介面缺陷为最主要的影响机制。