In addition, the emission peak of 20-layer SiGe QDs sample is observed 16 meV higher than that of 5-layer SiGe QDs sample due to more relaxation during growth.

• 此外，我们也观察到二十层矽锗量子点样本的发光顶点波长的能量比五层矽锗量子点样本要高出千分之十六电子伏特，这是由于二十层矽锗量子点在成长过程中所受应力松弛较多的缘故。